Performance of Double Gate SOI MOSFET
نویسندگان
چکیده
The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET devices will be strong contenders for RF applications in wireless communications market. As a result, the double gate MOSFET based on Silicon-on-insulator (SOI) substrate has become a promising candidate for sub-40nm technology nodes. DG-MOSFET devices provide better control of threshold voltage by utilizing electrostatic coupling from two gates on either side of the channel. The DG-MOSFET also provides superior transconductance that is not only suitable for digital applications, but also is a strong competitor for analog and radio frequency (RF) applications. DG-SOI-MOSFET is one of the most promising devices because of its short channel effect immunity, reduced leakage current and more scaling potential.
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